Abstract
Electronic transition in BGaAs/GaAs single quantum well (SQW) have been performed combining the dimensional Schrodinger equation, band anticroissing BAC and 10-band k.p models. The modeling results have been validated experimentally by photoluminescence (PL), high resolution-X-ray diffraction (HRXRD) and photo-reflectance (PR). The calculated results appeared to be consistent with experiments. Using secondary-ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS), contamination levels have been investigated. Cross-sectional transmission electron microscopy (TEM) reveals the QW growth and the strain, composition and thickness fluctuation in the BGaAs QW. Surface photovoltage SPV spectroscopy gives a new way to study the bandgap of the boron based-SQW for the first time. New e(1)-lh(1) transition appeared which is specific to the SQW. The suggested structure looks to be a promising candidate for solar cells and photonic applications as well as a reference for the growth optimization and understanding of the electronic properties of related B(In)GaAs/GaAs quaternary alloys.