Abstract
The present investigation is primarily aimed to investigate the impact of thiourea on characteristic properties of ammonium dihydrogen phosphate (NH4H2PO4, ADP) crystal to emphasize its utmost liability for designing nonlinear optical device applications. The most commercial slow solvent evaporation method has been opted to grow the undoped and thiourea doped ADP single crystals. The single crystal X-ray diffraction study has been employed to determine the structural parameters of undoped and thiourea doped ADP crystal. The elemental analysis has been performed to confirm the presence of thiourea in ADP crystal. The UV-visible studies have been carried out within 200-1100 nm to examine the constructive impact of thiourea on optical transparency and vital linear optical parameters (extinction coefficient, refractive index and reflectance) of ADP crystal. The Kurtz-Perry test has been employed to ascertain the enhancement in SHG efficiency of ADP crystal due to presence of thiourea. The third order nonlinear optical nature and properties such as nonlinear absorption (beta), refraction (n(2)) and susceptibility (chi(3)) of T-ADP crystal has been examined at 632.8 nm by imposing the Z-scan studies. The color centered photoluminescence emission behavior of pure and thiourea doped ADP crystal has been investigated within 320-650 nm. Vickers microhardness study has been imposed to evaluate the role of thiourea in uplifting the hardness parameters of ADP crystal. The dielectric parameters (dielectric constant and dielectric loss) of undoped and thiourea doped ADP crystal has been comparatively investigated within the temperature range of 25-100. degrees C. The surface growth habitat of thiourea doped ADP crystal has been investigated by means of chemical etching technique.