Abstract
The efficient photon harvesting in near infrared wavelength range is still a challenging problem for high performance Cu(In1-x, Gax)Se2 (CIGS) solar cell. Herein, adjusting the energy band distribution of CIGS solar cell could provide significant academic guidance for devices with superior output electric power. To understand the role of each functional layer, the optimal 3000 nm CIGS absorber layer with 1.3 eV bandgap and 30 nm CdS buffer layer were firstly obtained via simulating the uniform band-gap structures. By introducing CIGS absorber layer with a double grading Ga/(Ga+In) profile, the power conversion efficiency of the double gradient band gap cell is superior to that of uniform band-gap cell through extending absorption of near-infrared wavelength range. Upon optimization, the best power conversion efficiency of CIGS with a double gradient band gap solar cell is improved significantly to 24.90%, among the best values reported in literatures, which is an 8.17% relative increase compared with that of the uniform band-gap cell. Our findings provide a theoretical guide toward the design of high performance solar cells and enrich the understandings of the energy band engineering for developing of novel semiconductor devices.
•Extending absorption of near-infrared wavelength for CIGS solar cell is realized.•The best efficiency of CIGS solar cell with a double gradient band gap is 24.90%.•The bandgap of absorber decreases from 1.18 to 1.12 eV, and increases to 1.40 eV.