Abstract
We discovered that Si-doped Al0.05Ga0.95N can be used to realize an extremely low-resistivity n-type layer at room temperature. In Si-doped GaN, a resistivity of 2.7 x 10(-3) Omega cm with a carrier concentration of 4.0 x 10(19) cm(-3) was almost saturated. In contrast, Si-doped Al0.05Ga0.95N with a minimum resistivity of 5.9 x 10(-4) Omega cm was produced with an electron concentration and electron mobility of 1.4 x 10(20) cm(-3) and 70 cm(2)/V s, respectively. We confirmed a reduction in the differential resistance of a violet light-emitting diode with a high external quantum efficiency by using this Si-doped Al0.05Ga0.95N. (C) 2013 The Japan Society of Applied Physics