Extremely wide lasing bandwidth from InAs/InP quantum-dash ridge-waveguide laser near 1.6 mu m

MZM Khan; Tien Ng; C-S Lee; P Bhattacharya; Boon Ooi

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Extremely wide lasing bandwidth from InAs/InP quantum-dash ridge-waveguide laser near 1.6 mu m

MZM Khan, Tien Ng, C-S Lee, P Bhattacharya and Boon Ooi

IEEE Conferences, pp.1-2

01/06/2013

Abstract

Bandwidth

Barrier layers

Conferences

Devices

Electro-optics

Indium arsenides

Indium phosphides

Lasers

Lasing

We demonstrate an ultra-broad lasing bandwidth (-3dB) of > 50 nm utilizing InAs/InGaAlAs/InP quantum-dash ridge-waveguide laser using chirped AlGaInAs barrier layer thickness. Our device exhibits a recorded bandwidth and significant improvement of laser characteristics.

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Title: Extremely wide lasing bandwidth from InAs/InP quantum-dash ridge-waveguide laser near 1.6 mu m
Creators - without role: MZM Khan
Tien Ng
C-S Lee
P Bhattacharya
Boon Ooi
Publication Details: IEEE Conferences, pp.1-2
Identifiers: 9942060808331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article