Abstract
Barium ferrite films (BaFe12O19)
with perpendicular orientation are attractive candidates
for microwave device applications and ultrahigh density perpendicular recording.
An in situ annealing process is developed for the deposition
of Barium ferrite films by rf magnetron sputtering. The substrates are
held at temperatures of 550 to 600°C during the sputtering.
After the deposition, the substrate temperature is immediately raised to
900°C in the vacuum chamber in Ar and O2
atmosphere. c-axis orientated films are obtianed. The films exhibit
coercivity value of 4270 Oe and squareness of 0.87 in
perpendicular direction.