Abstract
An inexpensive spray pyrolysis technique was effectively used to form a p-type SnSb
2
S
4
thin film on n-type Si wafer for the first time to produce SnSb
2
S
4
/n-Si heterojunction. The capacitance-voltage estimations of the SnSb
2
S
4
/n-Si heterojunction have been recorded in the dark condition at 1 MHZ and demonstrated that the junction has an abrupt junction behavior. The dark current-voltage curve showed that the SnSb
2
S
4
/ n-Si heterojunction exhibits good rectifying properties. The device parameters represented in the series resistance (
R
s
) and ideality factor (
n
) were obtained from the current-voltage estimations in the dark conditions. In addition, the calculated values of ideality factor (
n
) establish to be greater than unity and they were decreased by rising the annealed temperature. According to the illumination condition with an intensity of 100 mW/cm
2
, we calculate the fill factor (
FF),
open-circuit voltage (
V
OC
) and the solar efficiency (
η
) for the SnSb
2
S
4
/ n-Si heterojunction.