Abstract
0.9Pb(Zr-0.53,Ti-0.47)O-3-0.1Pb(Zn-1/3,Nb-2/3)O-3 (PZT-PZN) thin films and integrated cantilevers have been fabricated. The PZT-PZN films were deposited on SiO2/Si or SiO2/Si3N4/SiO2/poly-Si/Si membranes capped with a sol-gel-derived ZrO2 buffer layer. It is found that the membrane layer stack, lead content, existence of a template layer of PbTiO3 (PT), and ramp rate during film crystallization are critical for obtaining large-grained, single-phase PZT-PZN films on the ZrO2 surface. By controlling these parameters, the electrical properties of the PZT-PZN films, their microstructure, and phase purity were significantly improved. PZT-PZN films with a dielectric constant of 700 to 920 were obtained, depending on the underlying stack structure.