Sign in
Back
Fabrication and characterisation of high sensitivity copper‐copper oxide‐copper (Cu‐CuO‐Cu) metal‐insulator‐metal tunnel junctions
Journal article   Peer reviewed

Fabrication and characterisation of high sensitivity copper‐copper oxide‐copper (Cu‐CuO‐Cu) metal‐insulator‐metal tunnel junctions

M. Abdel-Rahman, M. Syaryadhi and N. Debbar
Electronics letters, Vol.49(5), pp.363-364
28/02/2013
DOI: https://doi.org/10.1049/el.2012.4222

Abstract

Cu‐CuO‐Cu electron beam lithography high sensitivity copper‐copper oxide‐copper metal‐insulator‐metal tunnel junctions MIM structures size size 2 mum sputter deposition symmetrical metal‐insulator‐metal diodes
A report is presented on the realisation and characterisation of symmetrical metal‐insulator‐metal (MIM) diodes using the new material combination: copper‐copper oxide‐copper (Cu‐CuO‐Cu). The MIM diodes, having contact areas of 2 × 2 µm2, were fabricated using electron beam lithography and sputter deposition. The MIM diodes exhibited an absolute sensitivity as high as 4.497 V− 1.

Metrics

1 Record Views

Details