Abstract
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•For the first time, facile spin coating technique is employed to fabricate Ga doped novel WO3 films and n-Ga@WO3/p-Si heterojunction diode by keeping their optoelectronic applications point of view.•X-ray diffraction study reveals the orthorhombic structure of WO3 at all Ga contents and also Ga presence was approved.•EDX study confirm the presence of Ga in WO3 films.•SEM study shows that the morphology of WO3 is remarkably transformed from nanoplates to fine nano-leaves with some agglomeration when Ga is doped.•Enhancement in electrical conductivity was observed with temperature as well as with Ga doping content.•Robust electrical properties of the devices were studied.•Outcomes indicates that the developed thin films and heterojunction device is quite impressive for optoelectronic applications. Hence author hope that it will a great addition to the literature for scientists and optoelectronic industries.
In this work, we have fabricated the gallium doped tungsten trioxide (Ga@WO3) films and n-Ga@WO3/p-Si diodes by taking various concentrations (0, 3, 6, 9, and 12 wt%) of Ga through the spin-coating method. To analyze the impact of Ga-dopant on the physical properties of WO3 films, XRD, SEM, and robust dc electrical analyses have been used. From the XRD analysis, compared to the lower concentration of Ga dopant, the higher dopant concentrations show the presence of Ga on the o-GaWO3 crystal structure. The nanoplates-like surface morphology was detected by SEM analysis. The temperature-dependent dc conductivity was studied by I-V characterization, and 12 wt% of Ga doped WO3 thin film exhibits a higher conductivity value and low activation energy (Ea) at room temperature. The J-V nature signifies that n-WO3/p-Si diode performance was enhanced using Ga dopant concentration. The diode constraints ideality factor (n) and barrier height (ΦB) values were determined from J-V, Cheung’s, and Norde's functions. From J-V-T & Richardson plot (ln (J0/T2)), we obtain that the ΦB values were decreased with decreasing temperature. This is explained through the mechanism of thermionic emission with ΦB Gaussian distribution. The determined parameters of the fabricated films and junction diode signify that these can be employed in the applications of photodetectors and solar cells.