Abstract
Antimony trisulphide (Sb2S3) films were prepared by thermal evaporation technique on n-type single crystal Si substrates to fabricate p-Sb2S3/n-Si heterojunctions. The electrical transport properties of the peSb2S3/n-Si heterojunctions were investigated by currentevoltage (I-V) and capacitanceevoltage (C-V) measurements. The temperature-dependent I-V characteristics revealed that the forward conduction was determined by multi-step tunnelling current and the activation energy of saturation current was about 0.54 eV. The 1/C-2-V plots indicated the junction was abrupt and the junction built-in potential was 0.6 V at room temperature and decreased with increasing temperature. The solar cell parameters have been calculated for the fabricated cell as V-oc = 0.50 V, Jsc 14.53 mA cm(-2), FF = 0.32 and h 4.65% under an illumination of 50 mW cm(-2). (C) 2011 Elsevier B.V. All rights reserved.