Abstract
In this article, polycrystalline InSbS3 thin films were fabricated successfully at first time on the n-Si wafer by spray pyrolysis system to produce InSbS3/n-Si heterojunction. The structural characterization of the InSbS3 thin films was measured by FE-SEM and XRD techniques. The InSbS3 thin films are polycrystalline with orthorhombic structure. The diode parameters of the InSbS3/n-Si heterojunction like the barrier height (ϕb), series resistance (Rs) and the ideality factor (n) were evaluated by measuring the I–V characteristic curve in the dark situations. The C–V analysis of the InSbS3/n-Si heterojunction illustrates the junction was abrupt. The efficiency of the InSbS3/n-Si device were evaluated from the J-V characteristics curve under illuminations and equal 3.82%
•High quality InSbS3 thin films have been prepared by a simple spray pyrolysis technique at first time.•The structural properties of the InSbS3 films were investigated by FE-SEM and XRD techniques.•The diode parameters of the InSbS3/n-Si heterojunction were evaluated.•The InSbS3/n-Si heterojunction exhibit efficiency of 3.82%.