Abstract
This study presents the manufacture of the Cu2ZnSnSe4/n-Si (CZTSe4/Si) heterojunction via the liquid phase epitaxy process. The current-voltage estimation for CZTSe4/Si heterojunction is evaluated at temperatures ranged from 300 K to 420 K in the dark condition. The ideality factor (n) of the present heterojunction was calculated from the logarithmic plot of the current-voltage curve. Also, the series resistance (Rs) and the effective barrier height (?b) for the CZTSe4/Si heterojunction have evaluated and discussed. Also, diode parameters such as ??, ???, M?, M?, tan ?, Rs and ?ac were investigated from the C-V measurements. Negative values of the C, G, ??, ???, M?, tan ?, Rs and ?ac were observed at different frequencies, temperatures and applied bias voltages. Moreover, the unique homogenous structure of the heterojunction reaching to a smart device that switches from negative to positive magnitudes for most dielectric parameters.