Abstract
We use solution immersion method to prepare the SiO2 network structure. A single-layer PS sphere template was immersed in SiO2 precursor solution for a certain period of time. Filter paper was used to absorb the residual liquid, and then the PS nanospheres were removed by high temperature-annealing to form SiO2 network structure. The Si honeycomb structure was formed on the SiO2 network structure by chemical vapor deposition method. The longer growth time caused the smaller sizes of the Si apertures and produced various quantum size effects. When the growth time is 15 min, the thermal conductivity of the sample is the lowest. The heat conduction behavior of the 15 min sample is similar to that of a phonon crystal due to the aperture size of the sample is almost the same as the mean free path of phonons. Scattering at the interface of the isolated honeycomb microstructures also contributed to the low thermal conductivity. The position and number of the reflection peak of the sample can be controlled by the deposition time. The luminescence properties of the samples are greatly influenced by the surface topography.