Abstract
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•Preparation of nanocrystalline Au/[(n-hexyl)8PcRu]/Si/Al by thermal evaporation technique.•Current–voltage under dark and illumination conditions.•Capacitance–voltage (C–V) measurements.•Photovoltaic parameters were extracted and interpreted.
Nanocrystalline thin film of 2,3,9,10,16,17,23,24-octa(n-hexyl) phthalocyaninatoruthenium(II), [(n-hexyl)8PcRu] deposited under high vacuum by thermal evaporation technique. The surface morphology of [(n-hexyl)8PcRu] thin film was measured using transmission electron microscopy (TEM) which showed nano-rod structures. The current–voltage (I–V) and capacitance–voltage (C–V) measurements of [(n-hexyl)8PcRu] onto p-Si substrate were studied. Dark current voltage (I–V) measurement was investigated at different temperatures ranging from 308 to 378K indicates two conduction mechanisms: the first at lower forward voltages thermionic emission and second at higher forward voltages space charge limited currents (SCLC) with a single trap level. The ideality factor, n, series resistance RS, shunt resistance, RSh, and barrier height, Φb, were determined. The study of reverse voltage bias was interpreted in terms of generation-recombination. Abrupt nature was observed from dependence of capacitance–voltage for the device. Photovoltaic behavior was exhibited with power conversion efficiency η of 2.1%.