Abstract
In this work, two diodes of Au/perylene-66/p-Si/Al and Au/perylene-66/TiO2/p-Si/Al were prepared by conventional thermal evaporation technique. Temperature-dependence of the electrical characteristics of the two diodes in the temperature range of 303-373 K was investigated. Barrier height and ideality factor were determined and studied as a function of temperature. The barrier height was found to increase and the ideality factor decreases by increasing temperature which may be attributed to barrier height inhomogeneities. Variation of the capacitance-voltage characteristics (i.e. 1/C-2-V dependence) shows a straight line fit which support the abrupt diode type. Most of diode parameters of Au/perylene-66/TiO2/p-Si/Al is found to be high as compared to Au/perylene-66/p-Si/Al due to the effect of TiO2 insertion. The photovoltaic characteristics of the two diodes were investigated under illumination to study the applicability for optoelectronic applications. (c) 2015 Elsevier B.V. All rights reserved.