Abstract
•ZnO:MgO/n-Si diodes were fabricated by sol gel method.•The photoconductive and photocapacitance of the diodes is controlled by MgO doping.•The fabricated photodiodes can be used in optoelectronic device applications.
A solar light sensitive ZnO1-xMgOx/n-Si photodiode was fabricated using magnesium oxide (MgO) and zinc oxide (ZnO). The current-bias voltage (I-V) and capacitance-bias voltage (C-V) measurements were performed to analyze charge transport mechanism of the diode. The photosensitive behavior of the diodes were investigated under solar irradiation ranging from 20 mW/cm2 to 100 mW/cm2. The photocurrent of the diodes is increased with increasing illumination intensity. It is seen that the ZnO1-xMgOx/n-Si photodiode is switched by solar light irradiation. The diodes exhibited a high photoresponse. The photosensor behavior of ZnO1-xMgOx/n-Si photodiode is exhibited a linear photoconducting behavior for optic switching applications.
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