Abstract
Lead zirconate titanate (PZT) thick films with thickness up to 20
μm with relatively good property have been deposited on silicon wafers using a modified sol–gel slurry process. Submicrosized or nanosized PZT powder was dispersed into regular PZT sol–gel solutions to prepare the composite film. Ultrasonic arrays have been fabricated with 7
μm PZT thick film on the silicon membrane diagrams. The property of the PZT thick film, the fabrication process, the vibration characteristics and the ultrasonic emission property of the fabricated arrays are reported. The ultrasonic transducer can generate ultrasound with pressures up to 3.6
Pa.