Abstract
This work aims to prepare InSbS3 thin films using the spray pyrolysis procedure at various thicknesses t = 192, 265, 341, and 448 nm. The formation of the InSbS3 films was confirmed by the X-ray diffraction measurements that displayed orthorhombic structure of the InSbS3 films. On the other hand, Williamson-Hall (W-H) relation were used to assess the structural parameters for the spray deposited InSbS3 films. This method depicts the enhancement in the average grain size of the InSbS3 layers caused by growing the film thickness. On the other hand, the Tauc's relationship was applied to derive the direct energy gap of the as deposited and annealed InSbS3 films which reduced from 1.79 to 1.46 eV by raising the film thickness. Further, the optical dielectric constants of the novel InSbS3 films were boosted as the film thickness. Moreover, by extending the film thickness, we note an enhancement in the non-linear optical parameters chi(1) , chi(3) and n2 of the InSbS3 films. Moreover, the electrical conductivity of spray deposited InSbS3 films has been improved by increasing the film thickness. The hot probe procedure indicated that the spray deposited InSbS3 films are p-type semiconductors. The electrical results show that as the film thickness increases, the activation energy of the InSbS3 films decreases and the pre-exponential factor values are enlarged.