Ferromagnetism in Mn and Cr doped GaN by thermal diffusion

X.M. Cai; A.B. Djurišić; M.H. Xie; H. Liu; X.X. Zhang; J.J. Zhu; H. Yang

doi:10.1016/j.mseb.2004.12.008

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Ferromagnetism in Mn and Cr doped GaN by thermal diffusion

Journal article

Peer reviewed

Ferromagnetism in Mn and Cr doped GaN by thermal diffusion

X.M. Cai, A.B. Djurišić, M.H. Xie, H. Liu, X.X. Zhang, J.J. Zhu and H. Yang

Materials science & engineering. B, Solid-state materials for advanced technology, Vol.117(3), pp.292-295

25/03/2005

DOI: https://doi.org/10.1016/j.mseb.2004.12.008

Abstract

Ferromagnetism

GaN

Thermal doping

Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. X-ray diffraction measurements revealed no secondary phase in the samples. Experiments using superconducting quantum interference device (SQUID) showed that the samples were ferromagnetic at 5 and 300 K, implying the Curie temperature to be around or over 300 K, despite their n-type conductivity.

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Title: Ferromagnetism in Mn and Cr doped GaN by thermal diffusion
Creators - without role: X.M. Cai - Chinese University of Hong Kong
A.B. Djurišić - Chinese University of Hong Kong
M.H. Xie - Chinese University of Hong Kong
H. Liu - Hong Kong University of Science and Technology
X.X. Zhang - Hong Kong University of Science and Technology
J.J. Zhu - Institute of Semiconductors
H. Yang - Institute of Semiconductors
Publication Details: Materials science & engineering. B, Solid-state materials for advanced technology, Vol.117(3), pp.292-295
Publisher: Elsevier B.V
Identifiers: 9943457708331
Academic Unit: King Abdullah University of Science & Technology
Language: English
Resource Type: Journal article