Sign in
Back
First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm
Journal article   Open access  Peer reviewed

First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

M. A. Majid, A. A. Al-Jabr, H. M. Oubei, M. S. Alias, D. H. Anjum, T. K. Ng and B. S. Ooi
Electronics letters, Vol.51(14), pp.1102-1103
09/07/2015
DOI: https://doi.org/10.1049/el.2015.1658

Abstract

Engineering Engineering, Electrical & Electronic Science & Technology Technology
The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22 degrees C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm(-2) and a maximum output power of approximate to 46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.
url
https://doi.org/10.1049/el.2015.1658View
Published (Version of record) Open

Metrics

1 Record Views

Details