Abstract
The electronic structure calculations of the rare earth oxytellurides of formula Ln(2)O(2)Te have been investigated by using full potential linearized augmented plane method within Coulomb corrected local spin-density approximation LSDA+U. The LSDA+U calculations yield first time the indirect-gap semiconductors nature (Eg similar to 1.82 eV) for all Ln(2)O(2)Te, while no experimental data available. The substantial covalent bonds between Ln and O and less covalent bond between Ln and Te coexist in the materials. These materials have potential application in magneto-optoelectronic industry.