Abstract
A photoresponsive organic field-effect transistor was fabricated on indium tin oxide deposited onto polyethersulphone flexible substrate with pentacene as the active material and poly(4-vinyl phenol) as the dielectric material. The mobility, threshold voltage and maximum number of interface traps for the pentacene-OTFT under dark, UV and white light illuminations were found to be 2.22
×
10
−1
cm
2/V
s, 12.97
V, 1.472
×
10
13
eV
−1
cm
−2 and 2.93
×
10
−1
cm
2/V
s,14.84
V, 1.431
×
10
13
eV
−1
cm
−2 and 2.95
×
10
−1
cm
2/V
s, 17.70
V, 1.447
×
10
13
eV
−1
cm
−2, respectively. The phototransistor under UV and white illuminations exhibits a high photosensitivity in the off state. The obtained results indicate that the flexible pentacene transistor could be potentially used in photodetectors by a white light and UV optical gate.