Abstract
In the current study we discuss the formation mechanism and optical performance of cadmium sulfide-arsenic treseleinde heterojunctions. The cadmium sulfide-arsenic treseleinde interfaces are prepared by the physical vapor deposition technique. The deposited thin films of CdS onto amorphous As2Se3 substrates contain both cubic (65%) and hexagonal (35%) phases in their structure. Optically, while the As2Se3 exhibited an energy band gap value of 2.40eV, the CdS exhibits two energy band gaps of values of 3.24eV and 2.40eV. The valence and conduction band offsets for the As2Se3/CdS heterojunction are found to be 2.97eV and 2.13eV, respectively. On the other hand, the spectral analysis of the dielectric constant and optical conductivity reveal interesting properties presented by drift mobility and plasmon frequency values in the ranges of 35.02-4.11cm(2)/Vs and 0.13-5.90GHz, respectively. The optical conductivity increases from 0.5cm(-1) to 20cm(-1) in the spectral range of 1.1-3.0eV. These features are promising as they indicate the applicability of the As2Se3/CdS for the fabrication of metal-oxide-field effect transistors and photosensors as well.