Abstract
The formation of Si nanocrystallites (nc-Si) in erbium (Er)-dispersed SiO(x) (x <= 2) films was investigated by in situ annealing while performing transmission electron microscopy measurements. The correlation between the formation of nc-Si and Er ion emissions was also comprehensively investigated by photoluminescence and electron spin resonance measurements. The results showed that the formation of nano-Si region with the suitable size is important for enhancement of Er ion emission. (c) 2007 American Institute of Physics.