Abstract
The silicon carbide (SiC) nanowhiskers were obtained by a carbothermic reduction of silica (SiO2) with activated carbon at 1450 degrees C. The products were characterized by X-ray diffraction (XRD), Fourier transformed infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FE-SEM) and high resolution transmission electron microscopy (HR-TEM). The Sic nanowhiskers were grown as crystalline beta-SiC with the diameter ranging from 20 to 150 nm grew along (111) direction with the length up to several tens of micrometers. Yield of beta-SiC is very high with the moderate amount of un-reacted SiO2. This is the first report on the synthesis of high yield of beta-SiC by simple direct heating method. (C) 2008 Elsevier B.V. All rights reserved.