Abstract
Noncrystalline GeSeSn film was manufactured on a c-Si wafer by vacuum evaporation to create GeSeSn/c-Si heterojunction. X-ray diffraction (XRD) and scanning electron microscope (SEM) techniques were used to estimate its structure nature, which confirmed that GeSeSn film was noncrystalline, and uniform. The currentvoltage (I-V) characteristics for GeSeSn/c-Si heterojunction were explored at various temperatures extended from 298 to 363 K. The created GeSeSn/c-Si diode has displayed excellent rectifying properties with a rectification ratio of 1.82. Additionally, the diode parameters like the series resistance, ideality factor, and the barrier height were estimated from I-V curves. The optoelectronic attributes of this diode were examined through the I-V characteristics under the light with a power of 80 mW/cm(2). The efficiency of GeSeSn/c-Si diode was assessed and found to be 5.15%