Abstract
We report analysis of gas-phase chemistry and the generation pathways of polymers in a horizontal reactor under metalorganic vapor-phase epitaxy of GaN films by using computational fluid dynamics simulations. The simulation model considered radiative heat transfer and the reaction model of TMGa/NH
3/H
2 system, including the formation of polymers such as [Ga–N]
n
and [MMGaNH]
n
(
n=2–6). It was found that Ga–N polymers are generated at a temperature region about 700
K, and that the temperature is the boundary between [Ga–N]
2 dissociation ([Ga–N]
2→Ga–N) and Ga–N polymerization (such as [Ga–N]
2→[Ga–N]
3–6).