Abstract
In the present study, the theory of generalized photo-thermoelasticity under fractional order derivative was used to investigate the coupled of thermal, plasma, and elastic waves on unbounded semiconductor medium with spherical hole during the photothermoelastic process. Without neglecting the coupling between the thermoelastic and plasma waves that photo-generated through intensity modulated laser beam and tightly focused, a semiconducting isotropic elastic medium has homogeneity in thermal and elastic properties was considered. The analytical solutions in the transformed domain by the eigenvalue approach were observed through the transform techniques of Laplace. For silicon-like semiconductor material, the numerical computations have been done and the results are displayed graphically to estimate the effects of the thermal relaxation time and the fractional order parameters on the plasma, thermal, and elastic waves.