Abstract
This paper is devoted to the investigation of fractional order photo-thermo-elastic waves in a two-dimensional semiconductor using the eigenvalues approach. The formulations applied are based on the fractional order generalized thermo-elasticity in the context of the new model of heat conduction. The bounding surface of the plate is taken to be stress-free and exposed to a heat flux with the exponentially decaying pulse. By using Laplace's and Fourier's transformations and the eigenvalues approach methodology, the analytical solutions of variables have been obtained. A semiconducting material, such as silicon, has been investigated. In the conclusion, the results are graphically represented to show the effects of the thermal relaxation time and the fractional order parameters on the thermal, plasma and elastic waves.