Abstract
Sb2S3 Noncrystalline Chalcogenide films were synthesized via thermal vapor deposition approach. At room temperature, the intended films were irradiated with absorbed doses 100, 200 and 300 kGy and they have been characterized before and after irradiation by means of diffraction of X-ray. Spectrophotometric measurements were utilized to study the optical parameters for as grown and irradiated Sb2S3 films. It is found that a little modification in the fundamental energy band gap occurred while a significant change was occurring in the refractive index spectra. The dispersion of refractive index are modeled in accordance with a Wemple-DiDomenico single-oscillator model. This model is utilized to figure the nonlinear index of refraction (n(2)) and third-order nonlinear susceptibility (chi((3))). It is found that chi((3)) and n(2) increased with increasing irradiation doses. This may be explained by the fact that the external gamma irradiation causes an occurrence of defect centers.