Abstract
The goal of this paper is to present experimental results of the switching effect and analyze qualitatively the influence of various factors such as temperature, light illumination and sample thickness on switching behavior of the high quality binary chalcogenide semiconductor Tl2Te3. Current - controlled negative resistance of Tl2Te3 single crystal has been observed for the first time. It has been found that Tl2Te3 single crystal exhibit bistable or memory switching. The switching process takes place with both polarities on the crystal and has symmetric shapes. Current - voltage characteristics of Ag-Tl2Te3-Ag structures exhibit two distinct region, high resistance OFF state and low resistance ON state having negative differential resistance. Tl2Te3 is a binary semiconductor exhibiting S - type I-V characteristics. The specimen under test showed threshold switching with critical field of the switching 50 V/Cm at room temperature.