Abstract
ZnS thin films were grown on soda lime glass substrates by RF Magnetron sputtering technique at room temperature. Deposited films were annealed at 300 degrees C, 400 degrees C & 500 degrees C for 40 minutes, respectively. A comparative study of the structural, optical and electrical properties of the as-deposited and annealed samples was executed through XRD, AFM, UV-VIS spectrometry and Hall Effect measurement. From XRD, it has been found that the as-deposited films are amorphous in nature, whereas the significant peaks of the annealed samples reflects better crystallinity with (111) preferential orientation around 2 theta=28.88 degrees. The surface roughness of the films is also highly affected by the annealing temperature as observed from the AFM images. The optical properties of the films were ascertained for the photon wavelength ranging from 300 to 900 nm. The bandgaps of the films were found in the range of 3.19 eV to 3.29 eV. From the electrical characterization, bulk carrier density is found to be in the range of 10(12)/cm(3). The values of resistivity, mobility, Hall coefficient of the films are found to change significantly for different annealing temperatures.