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Ga-doped ZnS nanowires as precursors for ZnO/ZnGa2O4 nanotubes
Journal article   Peer reviewed

Ga-doped ZnS nanowires as precursors for ZnO/ZnGa2O4 nanotubes

Ujjal K. Gautam, Yoshio Bando, Jinhua Zhan, Pedro M. F. J. Costa, Xiaosheng Fang and Dmitri Golberg
Advanced materials (Weinheim), Vol.20(4), pp.810-814
18/02/2008
DOI: https://doi.org/10.1002/adma.200701761

Abstract

Chemistry Chemistry, Multidisciplinary Chemistry, Physical Materials Science Materials Science, Multidisciplinary Nanoscience & Nanotechnology Physical Sciences Physics Physics, Applied Physics, Condensed Matter Science & Technology Science & Technology - Other Topics Technology
Ga-doped ZnS nanowires are used as precursors for the preparation of ZnO/ZnGa2O4 composite nanotubes, as shown in the figure. Oxidation of the nanowires induces phase separation resulting in the formation of ZnO/ ZnGa2O4 phosphor heterostructures. The nanowires essentially serve as both precursors and templates for the fabrication of the nanotubes.

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