Abstract
Gallium Phosphide (GaP) has a band gap of 2.26 eV and a valance band edge that is more negative than the water oxidation level. Hence, it may be a promising material for photoelectrochemical water splitting. However, one thing GaP has in common with other IIIV semiconductors is that it corrodes in photoelectrochemical reactions. Cobalt oxide (CoOx) is a chemically stable and highly active oxygen evolution reaction co-catalyst. In this study, we protected a GaP photoanode by using a 20 nm TiO2 as a protection layer and a 2 nm cobalt oxide co-catalyst layer, which were both deposited via atomic layer deposition (ALD). A GaP photoanode that was modified by CoOx exhibited much higher photocurrent, potential, and photon-to-current efficiency than a bare GaP photoanode under AM1.5G illumination. A photoanode that was coated with both TiO2 and CoOx layers was stable for over 24 h during constant reaction in 1 M NaOH (pH 13.7) solution under one sun illumination. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.