Gap states density measurement in copper oxide thin films

M. Lamri Zeggar; M. Messaoudi; M. S. Aida; N. Attaf

doi:10.1016/j.mssp.2016.01.007

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Gap states density measurement in copper oxide thin films

Journal article

Peer reviewed

Gap states density measurement in copper oxide thin films

M. Lamri Zeggar, M. Messaoudi, M. S. Aida and N. Attaf

Materials science in semiconductor processing, Vol.45, pp.32-35

01/04/2016

DOI: https://doi.org/10.1016/j.mssp.2016.01.007

Abstract

Engineering

Engineering, Electrical & Electronic

Materials Science

Materials Science, Multidisciplinary

Physical Sciences

Physics

Physics, Applied

Physics, Condensed Matter

Science & Technology

Technology

The density of gap states near the Fermi level have been measured in copper oxide (CuO) thin films deposited by spray pyrolysis technique. The measurement method is based on the exploitation of the current-voltage characteristics of the space charge limited current (SCLC) measured in a sandwich Au/CuO/Au structure. The measured gap states density is equal to 1.5 x 10(14) cm(-3) and 2.0 x 10(14) eV(-1) respectively in films prepared at 300 and 400 degrees C substrate temperature, while the defect position are located at 16 and 20 meV above Fermi level. The carriers mobility and concentration are also determined from SCLC, the obtained results are in good agreement with Hall effect measurement ones. (C) 2016 Elsevier Ltd. All rights reserved.

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Title: Gap states density measurement in copper oxide thin films
Creators - without role: M. Lamri Zeggar - Interface
M. Messaoudi - Interface
M. S. Aida - Interface
N. Attaf - Interface
Publication Details: Materials science in semiconductor processing, Vol.45, pp.32-35
Publisher: Elsevier
Number of pages: 4
Identifiers: 9937888808331
Academic Unit: King Abdulaziz University
Language: English
Resource Type: Journal article