Abstract
In the current study, a gate dielectric constant engineering approach is reported to minimize the ambipolar conduction in MOSFET-Like Graphene Nano Ribbon (MOS-GNRFET). The dielectric constants, k, over different regions of the device play a crucial role in energy band diagram modification. So, by choosing suitable values of k over the drain, channel and source regions, the band-to-band tunneling (BTB) path at the drain-channel interface can be minimized. Subsequently, the ambipolar current in MOS-GNRFET is decreased substantially. In addition, the high frequency performance is investigated considering the cutoff frequency, f ( T ), as a figure of merit. It has been found that the proposed technique reduces the ambipolar current by about four orders, decreases OFF-current by two orders and consequently increases ON/OFF current ratio by two orders giving a value of 2.9 x 10(10). It has been found that the proposed technique does not deteriorate the gate capacitance which, in turn, enhances f ( T ) that reaches about 23 THz, making the proposed structure efficient for digital and analog performance.