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Journal article
General model for defect formation in silicon dioxide
A.K.M. Zakzouk
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IEE proceedings. Part I, Solid-state and electron devices, Vol.127(5), pp.230-234
1980
DOI:
https://doi.org/10.1049/ip-i-1.1980.0047
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Title
General model for defect formation in silicon dioxide
Creators - without role
A.K.M. Zakzouk - Riyadh Elm University
Publication Details
IEE proceedings. Part I, Solid-state and electron devices, Vol.127(5), pp.230-234
Identifiers
9951725508331
Academic Unit
King Saud University
Language
English
Resource Type
Journal article
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