Abstract
This study focuses on the effect of thermal relaxation times in a two-dimensional semiconductor medium by using eigenvalue approach. The formulation is applied under Green and Lindsay theory with two relaxation times. The bounding surface of the half-space is subjected to a heat flux with an exponentially decaying pulse and taken to be traction free. The variables solutions are obtained analytically by using Laplace-Fourier transformations and the eigenvalue approach methodology. A semiconducting material like as silicon is considered. The numerical computations are obtained and the outcomes are displayed graphically to assess the effects of the thermal relaxation times on the plasma, thermal, and elastic waves.