Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler-Nordheim stressing

Journal article

Peer reviewed

Applied physics letters, Vol.53(17), pp.1650-1651

24/10/1988

Abstract

Applied sciences

Compound structure devices

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

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Title: Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler-Nordheim stressing
Creators - without role: G. J Dunn - MIT, Lincoln lab., Lexington MA 02173, United States
Publication Details: Applied physics letters, Vol.53(17), pp.1650-1651
Publisher: American Institute of Physics
Identifiers: 9925191408331
Academic Unit: Prince Mohammad Bin Fahd University
Language: English
Resource Type: Journal article