Abstract
Metal halide perovskites have attracted tremendous attention as promising materials for future-generation optoelectronic devices. Despite their outstanding optical and transport properties, the lack of environmental and operational stability remains a major practical challenge. One of the promising stabilization avenues is metal oxide encapsulation via atomic layer deposition (ALD); however, the unavoidable reaction of metal precursors with the perovskite surface in conventional ALD leads to degradation and restructuring of the perovskites' surfaces. This Perspective highlights the development of a modified gas-phase ALD technique for alumina encapsulation that not only prevents perovskites' degradation but also significantly improves their optical properties and air stability. The correlation between precise atomic interactions at the perovskite-metal oxide interface with the dramatically enhanced optical properties is supported by density functional theory calculations, which also underlines the widespread applicability of this gentle technique for a variety of perovskite nanostructures unbarring potential opportunities offered by combination of these approaches.