Geometrical and light-induced effects on back-gating in ion-implanted GaAs MESFET's

Journal article

Peer reviewed

S Subramanian, P. K Bhattacharya, K. J Staker, C. L Ghosh and M. H Badawi

IEEE transactions on electron devices, Vol.32(1), pp.28-33

1985

Abstract

Applied sciences

Electronics

Exact sciences and technology

Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices

Transistors

1 Record Views

Title: Geometrical and light-induced effects on back-gating in ion-implanted GaAs MESFET's
Creators - without role: S Subramanian - Tata Institute of Fundamental Research
P. K Bhattacharya - University of Michigan–Ann Arbor
K. J Staker - Oregon State University
C. L Ghosh - Oregon State University
M. H Badawi - Oregon State University
Publication Details: IEEE transactions on electron devices, Vol.32(1), pp.28-33
Publisher: Institute of Electrical and Electronics Engineers
Identifiers: 9915135408331
Academic Unit: Imam Abdulrahman Bin Faisal University
Language: English
Resource Type: Journal article