Abstract
•Ge/ZnO nanorods were grown on silicon at different Ge contents.•The diameters of nanorods were in the range of 80–150 nm with length 3μm.•Zn2GeO4 was decorated with ZnO nanorods at 13at.% Ge.•HR-TEM image of ZnO nanorods are structurally uniform and single crystalline.•The photonic efficiency at 13at.%, showing maximum ∼2.99%.
Germanium (Ge) doped zinc oxide (ZnO) nanorods were fabricated on silicon substrate using a simple thermal evaporation method at different contents Ge (0–30at.%). High resolution transmission electron microscopy (HRTEM) images shows that prepared ZnO nanorods are structurally uniform and single crystalline. The diameters of the nanorods are in the range of 80–150nm with typical length of 3μm. The samples are evaluated by the determination of their photonic efficiencies for degradation of methylene blue. The photonic efficiency is increased with increasing the Ge content up to 13at.% showing maximum photonic efficiency as 2.99% and it is found to be about 2 times higher than that of undoped ZnO nanorods because Zn2GeO4 is grown and decorated ZnO nanorods and make heterojunction between Zn2GeO4 and ZnO nanorods. This is the first report focusing on Ge-catalyzed growth of ZnO nanorods for enhanced photonic efficiencies.