Abstract
Analysis has been carried out to check and study the working of a novel pocketed version of TFET in comparison to a conventional TFET. We have proposed a germanium pocket TFET using a dual dielectric (HfO
2
near the source side and SiO
2
near the drain side) and a gate which uses two separate materials at source/drain side for enhancement of TFET characteristics. These features help us to improve the SS, I
ON
and I
ON
–I
OFF
ratio. Germanium having a low band-gap enhances the tunneling at the source/channel (S/C) junction, thereby increasing the on-current. Dual dielectric further helps to increase the electric field at the S/C junction, hence escalating the tunneling and thereby the drain current in the on state. Our aim is also to reduce the ambipolar current. This is achieved by using a drain metal and a 10 nm gate/drain underlap. The operating drain voltage of our device is 0.4 V while the gate voltage is varied from −0.6 to 0.6 V. Simulation study clearly indicates that we have designed a device with much better characteristics like improved on-current (increased by two orders), higher ON current (I
ON
) to OFF current (I
OFF
) ratio (I
ON
/I
OFF
), lower ambipolarity (suppressed by ~ 7 orders) and a sharper SS of 30 mV/dec. AC analysis has also been carried out to study and inspect the device behavior at high frequency parameters.