Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer

Journal article

Peer reviewed

N. Khedher, M. Hajji, B. Bessaïs, H. Ezzaouia, A. Selmi and R. Bennaceur

Physica status solidi. C, Vol.2(9), pp.3486-3490

06/2005

Abstract

66.30.Jt

81.05.Rm

81.40.Rs

81.65.Tx

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Title: Gettering impurities from crystalline silicon by aluminum diffusion using a porous silicon layer
Creators - without role: N. Khedher - Research and Technology Center of Energy
M. Hajji - Research and Technology Center of Energy
B. Bessaïs - Research and Technology Center of Energy
H. Ezzaouia - Research and Technology Center of Energy
A. Selmi - University of Monastir
R. Bennaceur - Research and Technology Center of Energy
Publication Details: Physica status solidi. C, Vol.2(9), pp.3486-3490
Publisher: WILEY-VCH Verlag
Number of pages: 5
Identifiers: 9928287108331
Academic Unit: Qassim University
Language: English
Resource Type: Journal article