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Grain Boundary Analysis of Silicon Nitrides by 400 kV Analytical Electron Microscopy
Journal article

Grain Boundary Analysis of Silicon Nitrides by 400 kV Analytical Electron Microscopy

Yoshio Bando, Mamoru Mitomo and Yoshizo Kitami
Journal of electron microscopy, Vol.35(4), pp.371-377
1986

Abstract

400 kV analytical electron microscope electron energy loss spectroscopy (EELS) energy dispersive spectroscopy (EDS) grain boundary analysis sllicon nitride

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