Abstract
The successful mechanical exfoliation and chemical synthesis of graphene has attracted considerable attention for the synthesis of other two-dimensional materials on graphene template. Chalcogenide materials such as Sb2Te3 are of interest due to the rhombohedral lattice structure with two-dimensional hexagonally closed-packed atomic layers along the c-axis. Here we synthesized c-axis-oriented Sb2Te3 nanoplates (NPs) on graphene substrates by the microwave-assisted solvothermal method. The microwave irradiation resulted in a higher temperature of graphene, compared with the synthesis solution, which was revealed by the single-mode microwave experiments and an analytical model based on energy balance and convective heat transfer. Besides, the lattice mismatch between c-axis-oriented Sb2Te3 and bridge sites of graphene was only 4%, which is also favorable for the graphene-templated Sb2Te3 synthesis. c-Axis-oriented single-crystalline Sb2Te3 NPs as large as 7 mu m could be successfully synthesized on graphene with negligible damage of the graphene template. Larger surface coverage could be obtained by merging Sb2Te3 NPs. The merged Sb2Te3 NPs were polycrystalline with rotated grain boundaries. This work provides a facile, rapid, and low-cost synthesis route of c-axis-oriented Sb2Te3 NPs on graphene templates, which may be extended for the synthesis of various two-dimensional materials with hexagonally closed-packed atomic layers along the c-axis.