Abstract
In this work, we employed two nontoxic green chemistry methods to develop solution-processed copper oxide CuxO thin films at low annealing temperature of 200 degrees C. The first aqueous precursor of CuxO was prepared by mixing the copper powder with spinach leaves extract, whereas the other solution was formulated using the water-based polyol reduction method of Cu(II) nitrate. The as-prepared precursors were then spun on SiO2/P+ Si substrates to form nanoscale Metal-Oxide-Semiconductor (MOS) capacitors by which some valuable information about the CuxO semiconductor films and their interfaces with dielectric were acquired. Both fabricated MOS capacitors exhibited p-type polarity with negative flat-band voltages. However, the MOS based on spinach extract-CuxO films showed small hysteresis of 100 mV, which could be attributed to its large grain size that sequentially leads to smooth interface and less trap density. (C) 2017 Elsevier B.V..All rights reserved.