Abstract
A systematic study on structural and morphological properties of gallium selenide (GaSe) single crystals grown by vertical Bridgman technique is reported. A hexagonal structure of GaSe with lattice parameters
a=
b=3.74909
Å and
c=15.90698
Å has been confirmed with the help of powder X-ray diffraction (XRD). Respective values of strain (3.43×10
−4
lin
−2
m
−4) and dislocation density (1.35×10
14
lin
m
−2) have been calculated using powder X-ray diffraction results. High resolution X-ray diffraction (HRXRD) has been performed to ascertain the crystalline perfection of the grown single crystal. The scanning electron microscopy (SEM) and powder X-ray diffraction results are in good agreement as far as the grain size of the grown gallium selenide (GaSe) crystal is concerned.