Abstract
Anodic oxide films were galvanostatically grown on n-InSb(1
0
0) surfaces at various pH in sodium hydroxide (0.1 M NaOH, pH=13), borate buffer (0.075 M Na
2B
4O
7
+
0.3 M H
3BO
3, pH=8.4) and phosphate buffer (0.3 M NH
4H
2PO
4, pH=4.4). Thickness, composition and morphology of the oxide films were determined by various surface analytical techniques such as Auger electron spectroscopy, X-ray photoelectron spectroscopy, scanning and transmission electron microscopy and atomic force microscopy. The oxides comprise mainly In
2O
3 and Sb
2O
3 and the oxide thickness increases with pH. Electrical properties of oxides indicate that the films may be useful as insulators in some device applications.